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US 8,772,150 B2Granted
Method of forming p-type ZnO film
AssigneeGwangju Institute of Science and Technology
InventorsSeong Ju Park, Yong Seok Choi, Jang Won Kang
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Abstract
Disclosed herein is a method of forming a p-type zinc oxide thin film. A zinc oxide layer and an antimony oxide layer are alternately stacked one above another on a substrate, forming a superlattice layer. The superlattice layer is modified into a p-type zinc oxide thin film by annealing. Upon annealing, zinc atoms of the zinc oxide layer are diffused into the antimony oxide layer and antimony atoms of the antimony oxide layer are diffused into the zinc oxide layer.
Claims8
A method of forming a p-type zinc oxide thin film, comprising:
- forming a superlattice layer in which a zinc oxide layer and an antimony oxide layer are alternately stacked;
- and
- annealing the superlattice layer to modify the superlattice layer into a p-type zinc oxide thin film.
Dependencies are inferred from the claim text.