FinFET structure and method to adjust threshold voltage in a FinFET structure
AssigneeInternational Business Machines Corporation
InventorsEduard A. Cartier, Brian J. Greene, Dechao Guo, Gan Wang, Yanfeng Wang, Keith Kwong Hon Wong
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Abstract
FinFET structures and methods of manufacturing the FinFET structures are disclosed. The method includes performing an oxygen anneal process on a gate stack of a FinFET structure to induce Vt shift. The oxygen anneal process is performed after sidewall pull down and post silicide.
Claims8
A method comprising performing an oxygen anneal process on a gate stack of a FinFET structure to induce Vt shift and pulling down a sidewall spacer on the gate stack of the FinFET to expose at least a high-k dielectric material formed on a fin of the FinFET structure such that the high-k dielectric material is subjected to the oxygen anneal process, wherein the oxygen anneal process is performed post silicide.
Dependencies are inferred from the claim text.