Spacer structures of a semiconductor device

A method of fabricating a semiconductor device, comprising:

• forming a plurality of first gate electrodes arranged according to a gate pitch over a substrate, each first gate electrode having a first width;
• forming a plurality of second gate electrodes arranged according to the gate pitch over the substrate, each second gate electrode having a second width greater than the first width;
• forming a first set of spacer structures, each having a first spacer width, on sidewalls of the plurality of first gate electrodes;
• and
• forming a second set of spacer structures, each having a second spacer width less than the first spacer width, on sidewalls of the plurality of second gate electrodes.

A method of fabricating a semiconductor device, comprising:

• forming a first set of gate electrodes over a substrate, adjacent gate electrodes of the first set of gate electrodes having a gate pitch and being separated by a first gap width, and each gate electrode of the first set of gate electrodes having a first gate width;
• forming a second set of gate electrodes over the substrate, adjacent gate electrodes of the second set of gate electrodes having the gate pitch and being separated by a second gap width less than the first gap width, and each gate electrode of the second set of gate electrodes having a second gate width greater than the first gate width;
• (paragraph 0022)
• forming a first set of spacer structures on sidewalls of the first and second sets of gate electrodes;
• forming a second set of spacer structures abutting the first set of spacer structures;
• and
• removing a subset of the second set of spacer structures over the sidewalls of the second set of gate electrodes.