Vertical gallium nitride Schottky diode

A method for forming a vertical conduction nitride-based Schottky diode, comprising:

• providing an insulating substrate;
• forming a nitride-based semiconductor body of a first conductivity type on the insulating substrate;
• forming a first metal layer on a front side of the nitride-based semiconductor body to form a Schottky junction, the first metal layer forming an anode electrode of the Schottky diode;
• forming a second metal layer on the first metal layer;
• forming a solder ball on the second metal layer;
• forming a wafer level molding layer on the front side of the nitride-based semiconductor body, the wafer level molding layer encapsulating the second metal layer and at least part of the solder ball;
• separating the insulating substrate from the semiconductor body to expose a backside of the nitride-based semiconductor body;
• and
• forming a third metal layer on an exposed backside of the nitride-based semiconductor body, the third metal layer forming an ohmic contact with the semiconductor body and forming a cathode electrode of the Schottky diode,
• wherein the Schottky diode has a vertical current path from the solder ball, through the anode electrode and the Schottky junction to the cathode electrode.