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US 8,772,141 B2Granted
Doping carbon nanotubes and graphene for improving electronic mobility
AssigneeInternational Business Machines Corporation
InventorsAli Afzali-Ardakani, Bhupesh Chandra, George Stojan Tulevski
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Abstract
A method for doping a graphene or nanotube thin-film field-effect transistor device to improve electronic mobility. The method includes selectively applying a dopant to a channel region of a graphene or nanotube thin-film field-effect transistor device to improve electronic mobility of the field-effect transistor device.
Claims18
A method for doping a graphene field-effect transistor device to improve electronic mobility, comprising:
- selectively applying a dopant to a channel region of a graphene field-effect transistor device to improve electronic mobility of the field-effect transistor device, wherein said dopant comprises at least one of cerium ammonium nitrate and cerium ammonium sulfate.
A method for doping a carbon nanotube thin-film transistor (CNT-TFT) device to improve electronic mobility, comprising:
- selectively applying a dopant to a channel region of a carbon nanotube thin-film transistor (CNT-TFT) device to improve electronic mobility of the transistor device, wherein said dopant comprises at least one of cerium ammonium nitrate and cerium ammonium sulfate.
Dependencies are inferred from the claim text.