US 8,772,138 B2 · High voltage light emitting diode chip and its manufacturing method

Abstract

A high voltage light emitting diode chip and its manufacturing method are provided. The high voltage light emitting diode chip can be manufactured by forming a plurality of light emitting diode units on a substrate and electrically connecting the light emitting diode units, wherein a trench with a width of about 0.5 μm to about 7 μm is present between every two adjacent light emitting diode units to isolate the light emitting diode units. The procedure for manufacturing the high voltage light emitting diode chip is simple and the high voltage light emitting diode chip that is produced can exhibit satisfying luminous efficiency.

Claims19

Dependent claims

A method for manufacturing a high voltage light emitting diode chip, comprising:

forming a plurality of light emitting diode units on a substrate, wherein a trench with a width of about 0.5 μm to about 7 μm is present between every two adjacent light emitting diode units to isolate the light emitting diode units;
forming an insulating structure on the periphery of each light emitting diode unit;
and
electrically connecting the light emitting diode units.

1 more element

Dependencies are inferred from the claim text.

Facts

Application

13/465,077Filed 7 May 2012

Priority

TW 101105225 A17 Feb 2012

Published

US 2013/0214297 A122 Aug 2013

Granted

8 Jul 2014

Term ends

Not estimatedThe source records don’t support an estimate.

Classification6 codes

H10W 90/00
Package configurations
H10H 20/01
Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]: manufacture or treatment
H10H 20/857
Packages: interconnections, e.g. lead-frames, bond wires or solder balls
H10H 29/14
Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00: comprising multiple light-emitting…

High voltage light emitting diode chip and its manufacturing method

Life of this patent

High voltage light emitting diode chip and its manufacturing method

Life of this patent

Abstract

Claims19