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US 8,772,135 B2Granted
Semiconductor device manufacturing method using laser irradiation and dicing saw and semiconductor device thereof
AssigneeRenesas Electronics Corporation
InventorsYoshiyuki Abe, Chuichi Miyazaki, Hideo Mutou, Tomoko Higashino
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Abstract
To divide a semiconductor wafer by stealth dicing, a test pad in a cutting region and an alignment target are collectively arranged along one side in a width direction of the cutting region, and a laser beam for forming a modified region is irradiated to a position away in plane from the test pad and the alignment target Am. In this manner, defects in cutting shape in a cutting process of a semiconductor wafer using stealth dicing can be reduced or prevented.
Claims14
A method of manufacturing a semiconductor device comprising the steps of:
- (a) providing a semiconductor wafer including a substrate having a front surface and a back surface opposite to the front surface, an interlayer insulating film formed on the front surface of the substrate, a cutting region located between a first chip region of the semiconductor wafer and a second chip region of the semiconductor wafer arranged next to the first chip region in a plan view, and a metal pattern formed over the front surface of the substrate and formed in the cutting region in the plan view,
- wherein the interlayer insulating film has a wiring layer and a low-dielectric constant film, and
- wherein a dielectric constant of the low-dielectric constant film is lower than that of silicon oxide;
- (b) after the step of (a), forming a first modified region in the cutting region of the semiconductor wafer by irradiating along the cutting region and only between the first chip region and the metal pattern with a laser, and forming a second modified region in the cutting region of the semiconductor wafer by irradiating along the cutting region and only between the second chip region and the metal pattern with the laser,
- wherein only portions of the semiconductor wafer, which do not overlap with any metal layers including the metal pattern in the plan view, are irradiated with the laser, respectively;
- and
- (c) after the step of (b), removing the metal pattern, the interlayer insulating film and a portion of the substrate with a dicing saw along the cutting region and between the first modified region and the second modified region,
- wherein a width of the dicing saw is less than a distance between the first modified region and the second modified region.
5 more elements
A method of manufacturing a semiconductor device comprising the steps of:
- (a) providing a semiconductor wafer including a substrate having a front surface and a back surface opposite to the front surface, an interlayer insulating film formed on the front surface of the substrate, a cutting region located between a first chip region of the semiconductor wafer and a second chip region of the semiconductor wafer arranged next to the first chip region in a plan view, and a metal pattern formed over the front surface of the substrate and formed in the cutting region in the plan view,
- wherein the interlayer insulating film has a wiring layer and a low-dielectric constant film,
- wherein a dielectric constant of the low-dielectric constant film is lower than that of silicon oxide, and
- wherein the low-dielectric constant film is more brittle than the substrate;
- (b) after the step of (a), forming a first modified region in the cutting region of the semiconductor wafer by irradiating along the cutting region and between the first chip region and the metal pattern with a laser, and forming a second modified region in the cutting region of the semiconductor wafer by irradiating along the cutting region and between the second chip region and the metal pattern with the laser
- wherein only portions of the semiconductor wafer, which do not overlap with any metal layers including the metal pattern in the plan view, are irradiated with the laser, respectively;
- and
- (c) after the step of (b), removing the metal pattern, the interlayer insulating film and a portion of the substrate with a dicing saw along the cutting region and between the first modified region and the second modified region,
- wherein a width of the dicing saw is less than a distance between the first modified region and the second modified region.
6 more elements
A method of manufacturing a semiconductor device comprising the steps of:
- (a) providing a semiconductor wafer including a substrate having a front surface and a back surface opposite to the front surface, an interlayer insulating film formed on the front surface of the substrate, a cutting region located between a first chip region of the semiconductor wafer and a second chip region of the semiconductor wafer arranged next to the first chip region in a plan view, and a metal pattern formed over the front surface of the substrate and formed in the cutting region in the plan view,
- wherein the interlayer insulating film has a wiring layer and a low-dielectric constant film, and
- wherein a dielectric constant of the low-dielectric constant film is lower than that of silicon oxide;
- (b) after the step of (a), forming a first modified region in the cutting region of the semiconductor wafer by irradiating along the cutting region and between the first chip region and the metal pattern with a laser, and forming a second modified region in the cutting region of the semiconductor wafer by irradiating along the cutting region and between the second chip region and the metal pattern with the laser,
- wherein only portions of the semiconductor wafer, which do not overlap with any metal layers including the metal pattern in the plan view, are irradiated with the laser, respectively;
- and
- (c) after the step of (b), removing the metal pattern, the interlayer insulating film and a portion of the substrate with a dicing saw along the cutting region and between the first modified region and the second modified region,
- wherein a width of the dicing saw is less than or equal to a distance between the first modified region and the second modified region.
5 more elements
A method of manufacturing a semiconductor device comprising the steps of:
- (a) providing a semiconductor wafer including a substrate having a front surface and a back surface opposite to the front surface, an interlayer insulating film formed on the front surface of the substrate, a cutting region located between a first chip region of the semiconductor wafer and a second chip region of the semiconductor wafer arranged next to the first chip region in a plan view, and a metal pattern formed over the front surface of the substrate and formed in the cutting region in the plan view,
- wherein the interlayer insulating film has a wiring layer and a low-dielectric constant film,
- wherein a dielectric constant of the low-dielectric constant film is lower than that of silicon oxide, and
- wherein the low-dielectric constant film is more brittle than the substrate;
- (b) after the step of (a), forming a first modified region in the cutting region of the semiconductor wafer by irradiating along the cutting region and only between the first chip region and the metal pattern with a laser, and forming a second modified region in the cutting region of the semiconductor wafer by irradiating along the cutting region and only between the second chip region and the metal pattern with the laser, and
- wherein only portions of the semiconductor wafer, which do not overlap with any metal layers including the metal pattern in the plan view, are irradiated with the laser, respectively;
- and
- (c) after the step of (b), removing the metal pattern, the interlayer insulating film and a portion of the substrate with a dicing saw along the cutting region and between the first modified region and the second modified region,
- wherein a width of the dicing saw is less than or equal to a distance between the first modified region and the second modified region.
6 more elements
Dependencies are inferred from the claim text.