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US 8,772,133 B2Granted
Utilization of a metallization scheme as an etching mask
AssigneeInfineon Technologies AG
InventorsManfred Engelhardt, Martin Zgaga, Karl Adolf Mayer, Gudrun Stranzl
Life of this patent
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Abstract
The various aspects comprise methods and devices for processing a wafer. An aspect of this disclosure includes a wafer. The wafer comprises a plurality of die regions; a plurality of kerf regions between the plurality of die regions; and a metallization area on the plurality of die regions.
Claims14
A method of processing a wafer, the method comprising:
- providing a wafer having a plurality of die regions and a plurality of kerf regions;
- forming a metallization area in the plurality of die regions, the metallization layer having at least an exposed top surface;
- and
- applying a gas composition to the wafer, the gas composition etching away the plurality of kerf regions,
- wherein the metallization area is a self-aligning mask for die separation, and
- wherein the gas composition reacts at least with the at least exposed to surface of the metallization area to form a passivation layer.
3 more elements
A wafer comprising:
- a plurality of die regions;
- a plurality of kerf regions between the plurality of die regions;
- and
- a metallization area on the plurality of die regions, the metallization layer having at least an exposed top surface;
- wherein the metallization area is a self-aligning mask for die separation, and
- wherein at least the at least exposed top surface of the metallization area is configured to react with a gas composition to form a passivation layer.
3 more elements
A method of making a semiconductor device, comprising:
- providing a semiconductor die with a plurality of die regions and a plurality of kerf regions;
- forming a metallization area in the plurality of die regions, the metallization layer having at least an exposed top surface;
- and
- applying a gas composition to the wafer, the gas composition etching away the plurality of kerf regions,
- wherein the metallization area is a self-aligning mask for die separation, and
- wherein the gas composition reacts at least with the at least exposed top surface of the metallization area to form a passivation layer.
3 more elements
Dependencies are inferred from the claim text.