Method for manufacturing semiconductor device

A method for manufacturing a semiconductor device, comprising the steps of:

• fixing a single crystal semiconductor layer to a glass substrate with a buffer layer interposed therebetween;
• and
• while heating the single crystal semiconductor layer fixed to the glass substrate at a temperature equal to or lower than a strain point of the glass substrate by a heated gas, irradiating a part of the single crystal semiconductor layer with a laser beam to melt an upper portion with leaving a single crystal region in a lower portion, thereby performing re-single-crystallization of the upper portion into a single crystal state having the same crystal orientation as the single crystal region of the lower portion.

A method for manufacturing a semiconductor device, comprising the steps of:

• fixing a single crystal semiconductor layer to a glass substrate with a buffer layer interposed therebetween;
• and
• while heating the single crystal semiconductor layer fixed to the glass substrate at a temperature equal to or lower than a strain point of the glass substrate by a heated gas, irradiating a part of the single crystal semiconductor layer with a laser beam to melt a region irradiated with the laser beam in the single crystal semiconductor layer, thereby performing re-single-crystallization into a single crystal state having the same crystal orientation as a single crystal state in a region adjacent to the region irradiated with the laser beam.