Method of manufacturing a semiconductor device including grinding from a back surface and semiconductor device
AssigneeInfineon Technologies AG
InventorsHans-Joachim Schulze, Anton Mauder
Life of this patent
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Abstract
A cavity is etched from a front surface into a semiconductor substrate. After providing an etch stop structure at the bottom of the cavity, the cavity is closed. From a back surface opposite to the front surface the semiconductor substrate is grinded at least up to an edge of the etch stop structure oriented to the back surface. Providing the etch stop structure at the bottom of an etched cavity allows for precisely adjusting a thickness of a semiconductor body of a semiconductor device.
Claims13
A method of manufacturing a semiconductor device, the method comprising
- etching a cavity from a front surface into a semiconductor substrate;
- providing an etch stop structure from at least one of silicon oxide, silicon nitride and silicon oxynitride at the bottom of the cavity;
- closing the cavity;
- grinding the semiconductor substrate from a back surface opposite to the front surface at least up to an edge of the etch stop structure oriented toward the back surface;
- monitoring, during grinding, a grind stop signal indicating exposure of the etch stop structure;
- and
- stopping or controlling the grinding in response to detection of the grind stop signal;
- wherein providing the etch stop structure comprises providing an etch resistive material at the
- bottom of the cavity, the etch resistive material being absent in a portion of the cavity above the etch stop structure;
- and
- wherein closing the cavity comprises tempering, after providing the etch stop structures, the semiconductor substrate in a hydrogen containing ambient to control a collapse of the cavity above the etch stop structure and to form a contiguous layer of a semiconductor material forming the semiconductor substrate above the collapsed cavity, the etch stop structure forming a buried etch stop island.
A method of manufacturing a semiconductor device, the method comprising
- etching a cavity forming a grid from a front surface into a semiconductor substrate;
- providing an etch stop structure from at least one of silicon oxide, silicon nitride and silicon oxynitride at the bottom of the cavity;
- closing the cavity at least partially;
- grinding the semiconductor substrate from a back surface opposite to the front surface at least up to an edge of the etch stop structure oriented to the back surface;
- monitoring, during grinding, a grind stop signal indicating exposure of the etch stop structure;
- stopping or controlling the grinding in response to detection of the grind stop signal;
- and
- singularizing a semiconductor die from the semiconductor substrate along a parting line cutting through the etch stop structure;
- wherein providing the etch stop structure comprises providing an etch resistive material at the bottom of the cavity, the etch resistive material being absent in a portion of the cavity above the etch stop structure;
- and
- wherein closing the cavity comprises tempering, after providing the etch stop structures, the semiconductor substrate in a hydrogen containing ambient to control a collapse of the cavity above the etch stop structure and to form a contiguous layer of a semiconductor material forming the semiconductor substrate above the collapsed cavity, the etch stop structure forming a buried etch stop island.
Dependencies are inferred from the claim text.