Programmable metallization memory cell with layered solid electrolyte structure

A method of forming a programmable metallization memory cell comprising:

• forming a first electrode;
• forming an angled insulator layer on the first electrode;
• forming a variable resistive element by depositing a plurality of alternating solid electrolyte layers and electrically conductive layers on the angled insulator layer, the solid electrolyte layers and the electrically conductive metal layers are parallel to each other and layered in an alternating fashion, the plurality of parallel alternating solid electrolyte layers and electrically conductive layers extend in a non-parallel direction with the first electrode and at an angle relative to the first electrode in a range from 10 to 75 degrees;
• and
• depositing a second electrode on the variable resistive element, the electrically conductive layers electrically couple the first electrode to the second electrode.