Phase change memory devices and methods of manufacturing the same

A method of manufacturing a phase change memory device, the method comprising:

• forming a lower electrode layer pattern on a substrate;
• forming an insulating interlayer covering the lower electrode layer pattern on the substrate;
• partially removing the insulating interlayer to form a first opening, the first opening exposing the lower electrode layer pattern;
• forming an oxide layer on the lower electrode layer pattern and on a sidewall of the first opening;
• partially removing the oxide layer and the lower electrode layer pattern to form an oxide layer pattern on the sidewall of the first opening and a lower electrode under the oxide layer pattern;
• forming an insulation layer filling a remaining portion of the first opening on the substrate;
• removing the oxide layer pattern by a wet etching process to form a second opening, the second opening exposing a top surface of the lower electrode;
• and
• forming a phase change material pattern on the lower electrode such that the phase change material pattern fills the second opening.