US 8,772,120 B2 · Semiconductor process

Abstract

A semiconductor process includes the following steps. A gate structure is formed on a substrate. A main spacer is formed on the substrate beside the gate structure. A source/drain is formed in the substrate beside the main spacer. After the source/drain is formed, an epitaxial structure is formed in the substrate beside the main spacer. A gate structure may be respectively formed in a first area and a second area of a substrate. A main spacer is formed on the substrate respectively beside the two gate structures. A source/drain is formed in the substrate respectively beside the two spacers. After the two source/drains are formed, an epitaxial structure is formed in the substrate respectively beside the main spacers.

Claims19

Dependent claims

A semiconductor process, comprising:

forming a gate structure on a substrate;
forming a main spacer on the substrate beside the gate structure;
forming a source/drain in the substrate beside the main spacer;
removing the main spacer;
forming an epitaxial spacer on the substrate beside the gate structure after the main spacer is removed;
forming a recess in the substrate beside the epitaxial spacer;
and
performing an epitaxial process to form an epitaxial structure in the recess after the source/drain is formed.

5 more elements

Dependencies are inferred from the claim text.

Facts

Application

13/479,279Filed 24 May 2012

Published

US 2013/0316506 A128 Nov 2013

Granted

8 Jul 2014

Term ends

Not estimatedThe source records don’t support an estimate.

Classification8 codes

H10D 84/038
Using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology: using silicon technology, e.g. SiGe
H10D 84/0128
The components including insulated gates, e.g. IGFETs: manufacturing their channels
H10D 84/0133
Manufacturing their source or drain regions, e.g. silicided source or drain regions: manufacturing common source or drain regions between multiple…
H10D 84/0147
The components including insulated gates, e.g. IGFETs: manufacturing their gate sidewall spacers

Semiconductor process

Life of this patent

Semiconductor process

Life of this patent

Abstract

Claims19