Offset screen for shallow source/drain extension implants, and processes and integrated circuits

A process of integrated circuit manufacturing comprising:

• providing a first gate stack and a second gate stack over a substrate;
• forming a spacer on the sidewalls of the first gate stack and the second gate stack to provide a first horizontal offset over a first channel region under the first gate stack;
• performing a PLDD implant adjacent the first gate stack having the first horizontal offset provided by said spacer;
• after performing the PLDD implant, depositing a seal substance over the spacer, the first gate stack and the second gate stack to provide a screen thickness vertically while thereby augmenting the spacer on the second gate stack to provide a second, increased, offset horizontally from the second gate stack;
• and
• subsequently providing an NLDD implant dose for NLDD formation using the unetched seal substance as a horizontal screen.