Dielectric equivalent thickness and capacitance scaling for semiconductor devices

A device, comprising:

• a gate structure including:
• a gate dielectric having:
• an oxygen scavenged high dielectric constant material formed over a semiconductor substrate wherein the high dielectric constant material includes reduced oxygen content sufficient to permit an improved capacitive equivalent thickness (CET) of at least 5 Angstroms for the high dielectric constant material;
• and
• a gate conductor configured to enable a channel formed in the semiconductor substrate adjacent to the gate structure.

A device, comprising:

• a substrate including one of a III-V material or a II-VI material;
• a dielectric stack formed over the substrate with improved capacitive equivalent thickness (CET) and equivalent oxide thickness (EOT), having:
• an oxygen scavenged passivation layer formed on the substrate;
• and
• an oxygen scavenged high dielectric constant material formed over the passivation layer wherein the passivation layer and the high dielectric constant layer include reduced oxygen content sufficient to permit an improvement of at least 5 Angstroms for CET and EOT;
• and
• a conductive material formed on the high dielectric constant material.

A method for fabricating a capacitive component, comprising:

• forming a high dielectric constant material over a semiconductor material;
• forming a scavenging layer on the high dielectric constant material;
• and
• annealing to form an oxide layer between the high dielectric constant layer and the scavenging layer such that oxygen in the high dielectric constant material is drawn out to reduce oxygen content.

A method for fabricating a capacitive component, comprising:

• providing a first capacitive plate formed in a semiconductor substrate;
• forming a capacitor dielectric on the substrate with a high dielectric constant material;
• forming a scavenging layer on the capacitor dielectric;
• annealing to form an oxide layer between the capacitor dielectric and the scavenging layer such that oxygen in the capacitor dielectric is drawn out to reduce oxygen content in the capacitor dielectric;
• removing the scavenging layer and the oxide layer;
• and
• forming a second electrode on the capacitor dielectric.

A method for fabricating a capacitive component, comprising:

• providing a channel layer in a semiconductor substrate;
• forming a gate dielectric over the substrate, which includes a high dielectric constant material;
• forming a scavenging layer on the gate dielectric;
• annealing to form an oxide layer between the gate dielectric and the scavenging layer such that oxygen in the gate dielectric is drawn out to reduce oxygen content in the gate dielectric;
• removing the scavenging layer and the oxide layer;
• and
• forming a gate electrode on the gate dielectric.