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US 8,772,110 B2Granted
Semiconductor device having fin structure and method of manufacturing the same
AssigneeSK hynix Inc.
InventorSeung Joo Baek
Life of this patent
Estimating the term…
Abstract
In a semiconductor device, a thin wall oxide film formed over sidewalls of an active region is formed, and a portion of the wall oxide film adjacent to a gate region is removed. A gate insulating film is formed where the portion of wall oxide film was removed to prevent a parasitic transistor from being generated by the wall oxide film.
Claims13
A method of manufacturing a semiconductor device, the method comprising:
- etching a semiconductor substrate to form a device isolation trench that defines an active region;
- forming a wall oxide film having a first thickness over inner surfaces of the device isolation trench;
- forming a device isolation film in the device isolation trench;
- etching the active region and the device isolation film to form a recess with a first depth over the active region and a second depth greater than the first depth over the device isolation film;
- forming a moat by removing portions of the wall oxide film adjacent to a portion of the active region exposed by the recess;
- forming a gate insulating film extending into the moat;
- and
- forming a gate in the recess.
5 more elements
A method of manufacturing a semiconductor device, the method comprising:
- etching a semiconductor substrate to form a device isolation trench that defines an active region;
- forming a wall oxide film having a first thickness over inner surfaces of the device isolation trench;
- implanting an inert gas into the wall oxide film;
- forming a device isolation film in the device isolation trench;
- etching the active region and the device isolation film to form a recess with a first depth over the active region and a second depth greater than the first depth over the device isolation film;
- forming a moat by removing portions of the wall oxide film adjacent to a portion of the active region exposed by the recess;
- forming a gate insulating film having a second thickness over portions of the active region exposed by the recess and the moat;
- and
- forming a gate in the recess.
6 more elements
A method of manufacturing a semiconductor device, the method comprising:
- etching a semiconductor substrate to form a device isolation trench that defines an active region;
- forming a wall oxide film having a first thickness over inner surfaces of the device isolation trench;
- forming a device isolation film in the device isolation trench;
- etching the active region and the device isolation film to form a recess with a first depth over the active region and a second depth greater than the first depth over the device isolation film;
- forming a moat by removing portions of the wall oxide film adjacent to a portion of the active region exposed by the recess;
- forming a gate insulating film having a second thickness over portions of the active region exposed by the recess and the moat;
- and
- forming a gate in the recess,
- wherein forming the moat further comprises removing a portion of the device isolation film while removing the portions of the wall oxide film to extend a width of the recess.
6 more elements
Dependencies are inferred from the claim text.