Multi-time programmable non-volatile memory
AssigneeGlobalfoundries Singapore Pte. Ltd.
InventorsEng Huat Toh, Shyue Seng Tan, Elgin Quek
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Abstract
A process for creating a low-cost multi-time programmable (MTP) non-volatile memory (NVM) and the resulting device are provided. Embodiments include forming a select gate and a floating gate above a substrate, each over a first shallow trench isolation (STI) region, a doped region formed between a source and a drain, and a second STI region, forming a metal layer over the floating gate, and forming a pair of self-aligned contacts on the first and second STI regions on opposite sides of the doped region, respectively, and electrically connected to the metal layer.
Claims20
A method comprising:
- forming a select gate and a floating gate above a substrate, each over a first shallow trench isolation (STI) region, a doped region formed between a source and a drain, and a second STI region;
- forming a metal layer over the floating gate;
- and
- forming a pair of self-aligned contacts on the first and second STI regions on opposite sides of the doped region, respectively, and electrically connected to the metal layer.
A device comprising:
- a doped region formed between a source and a drain within a substrate;
- first and second shallow trench isolation (STI) regions on opposite sides of the doped region;
- a select gate and a floating gate each over the first STI region, the doped region, and the second STI region;
- a metal layer over the floating gate;
- and
- a pair of self-aligned contacts formed along one side of the floating gate on the first and second STI regions on opposite sides of the doped region, respectively, and electrically connected to the metal layer.
A method comprising:
- forming a select gate and a floating gate above a substrate, each over a first shallow trench isolation (STI) region, a doped region formed between a source and a drain, and a second STI region;
- forming a first metal layer over the floating gate;
- forming two pairs of self-aligned contacts on the first and second STI regions, respectively, electrically connected to the first metal layer with self-aligned contacts of each pair being on opposite sides of the floating gate and the two pairs of self-aligned contacts being on opposite sides of the doped region;
- forming a second metal layer over the doped region, the source, and the drain and above the first metal layer;
- and
- forming a bit line contact connecting the second metal layer and the drain.
Dependencies are inferred from the claim text.