Method of manufacturing semiconductor device using stress memorization technique

A method of manufacturing a semiconductor device, the method comprising:

• providing a structure that includes a substrate, and a gate electrode disposed on an upper part of the substrate, the gate electrode having opposite sides, wherein the substrate has source/drain regions located to the sides of the gate electrode, respectively, and a channel region interposed between the source/drain regions;
• and
• inducing stress in the channel region of the substrate by growing crystals in the source/drain regions at substantially the same rates in both <001> and <110> crystallographic directions substantially perpendicular and parallel to an upper surface of substrate, respectively,
• wherein the inducing of stress in the channel region comprises:
• performing a pre-amorphization implantation (PAI) process that amorphizes the source/drain regions,
• doping the source/drain regions amorphized by the PAI process to form doped amorphous source/drain regions of the substrate,
• forming over the doped amorphous source/drain regions of the substrate a stress inducing layer, and
• subsequently subjecting the amorphous source/drain regions to a solid phase epitaxial (SPE) growth process that recrystallizes the amorphous source/drain regions, the stress inducing layer stressing the doped amorphous source/drain regions during the recrystallizating of the doped amorphous source/drain regions.

A method of manufacturing a semiconductor device, the method comprising:

• providing a structure that includes a substrate, and a gate electrode at an upper part of the substrate, the gate electrode having opposite sides, wherein the substrate has source/drain regions located to the sides of the gate electrode;
• performing a pre-amorphization implantation (PAI) process that amorphizes the source/drain regions;
• implanting C or N into the amorphized source/drain regions;
• forming a stress inducing layer that covers the substrate;
• subsequently recrystallizing the amorphized source/drain regions by annealing the substrate;
• and
• removing the stress inducing layer after the substrate has been annealed.