Integrated circuits using guard rings for ESD, systems, and methods for forming the integrated circuits

A method of forming an integrated circuit, the method comprising:

• forming at least one transistor over a substrate, the transistor having a first terminal and a second terminal;
• forming a first guard ring around the at least one transistor, the first guard ring electrically connected to the first terminal of the at least one transistor;
• forming a second guard ring around the first guard ring, the second guard ring electrically connected to the second terminal of the at least one transistor;
• and
• electrically connecting the first guard ring and the second guard ring.

A method of forming a semiconductor device, the method comprising:

• forming a converter configured to convert an external voltage to an operating voltage;
• and
• forming an integrated circuit configured to receive the operating voltage, forming the integrated circuit comprises:
• forming at least one transistor over a substrate, the transistor having a first terminal configured to receive a reference voltage and a second terminal configured to receive the operating voltage;
• forming a first guard ring around the at least one transistor, the first guard ring electrically connected to the first terminal of the at least one transistor;
• forming a second guard ring around the first guard ring, the second guard ring electrically connected to the second terminal of the at least one transistor;
• and
• electrically connecting the first guard ring and the second guard ring.