Integrated circuit manufacturing method

A method of providing a dielectric material having regions with respective different thicknesses in an integrated circuit manufacturing process, the method comprising:

• providing a plurality of pixilated elements in a substrate and covering the substrate with a dielectric layer;
• forming a plurality of first mirror elements in the dielectric layer;
• depositing a dielectric material over the dielectric layer;
• patterning a plurality of regions of the dielectric material to set the susceptibility of the dielectric material to a dielectric material removal step by a predefined amount;
• exposing the dielectric material to the dielectric material removal step, and using the patterns concurrently provided to provide the respective different thicknesses;
• and
• depositing a plurality of second mirror elements on the dielectric material.

A method of providing a dielectric material having regions with respective different thicknesses in an integrated circuit manufacturing process, the method comprising:

• providing a plurality of pixilated elements in a substrate and covering the substrate with a dielectric layer;
• forming a plurality of first mirror elements in the dielectric layer;
• depositing a dielectric material over the dielectric layer;
• patterning a plurality of regions of the dielectric material to set the susceptibility of the dielectric material to a dielectric material removal step by a predefined amount;
• exposing the dielectric material to the dielectric material removal step to provide the dielectric material with regions of respective different thicknesses;
• and
• depositing a plurality of second mirror elements on the dielectric material, wherein the step of exposing the dielectric material to the dielectric removal step provides a first removal rate in the patterned regions of the dielectric material and a second lower rate in unpatterned regions of the dielectric material.