Silicon substrate having textured surface, solar cell having same, and method for producing same

A method of manufacturing a silicon substrate for a solar cell, comprising:

• a process A of preparing a silicon ingot having a substrate surface orientation (111);
• a process D′ of implanting ions through the substrate surface into the silicon ingot to form an ion-implanted layer;
• a process B of blowing an etching gas including a fluorine-containing gas to the substrate surface of the silicon ingot to form a textured surface;
• a process C of implanting a dopant to the textured surface to form a PN junction in a surface layer of the silicon ingot;
• and
• a process E of dividing the silicon ingot at the ion-implanted layer by applying an impact to the silicon ingot in which the ion-implanted layer is formed to obtain a silicon substrate having a thickness of 50 μm or less.

A method of manufacturing a silicon substrate for a solar cell, comprising:

• a process A of preparing a silicon ingot having a substrate surface orientation (111);
• a process B of blowing an etching gas including a fluorine-containing gas to the substrate surface of the prepared silicon ingot to form a textured surface;
• a process D″ of implanting ions through the textured surface into the silicon ingot to form an ion-implanted layer;
• a process C of implanting a dopant to the textured surface to form a PN junction in a surface layer of the silicon ingot;
• a process E of dividing the silicon ingot at the ion-implanted layer by applying an impact to the silicon ingot in which the ion-implanted layer is formed to obtain a silicon substrate having a thickness of 50 μm or less.

A method of manufacturing a silicon substrate for a solar cell, comprising:

• a process A of preparing a silicon ingot having a substrate surface orientation (111);
• a process B of blowing an etching gas including a fluorine-containing gas to the substrate surface of the silicon ingot to form a textured surface;
• a process C of irradiating the textured surface with a laser to form a hole therein;
• a process D of implanting a dopant to the textured surface to form a PN junction in a surface layer of the silicon ingot and an inner wall surface layer of the hole;
• a process E of implanting ions through the textured surface into the silicon ingot to form an ion-implanted layer;
• and
• a process F of dividing the silicon ingot at the ion-implanted layer by applying an impact to the silicon ingot in which the ion-implanted layer is formed to obtain a silicon substrate having a thickness of 50 μm or less.

A method of manufacturing a silicon substrate for a solar cell, comprising:

• a process A of preparing a silicon ingot having a substrate surface orientation (111);
• a process E′ of implanting ions through the substrate surface into the silicon ingot to form an ion-implanted layer;
• a process B of blowing an etching gas including a fluorine-containing gas to the substrate surface of the silicon ingot to form a textured surface;
• a process C of irradiating the textured surface with a laser to form a hole therein;
• a process D of implanting a dopant to the textured surface to form a PN junction in a surface layer of the silicon ingot and an inner wall surface layer of the hole;
• and
• a process F of dividing the silicon ingot at the ion-implanted layer by applying an impact to the silicon ingot in which the ion-implanted layer is formed to obtain a silicon substrate having a thickness of 50 μm or less.

A method of manufacturing a silicon substrate for a solar cell, comprising:

• a process A of preparing a silicon ingot having a substrate surface orientation (111);
• a process B of blowing an etching gas including a fluorine-containing gas to the substrate surface of the silicon ingot to form a textured surface;
• a process E″ of implanting ions through the textured surface into the silicon ingot to form an ion-implanted layer;
• a process C of irradiating the textured surface with a laser to form a hole therein;
• a process D of implanting a dopant to the textured surface to form a PN junction in a surface layer of the silicon ingot and an inner wall surface layer of the hole;
• and
• a process F of dividing the silicon ingot at the ion-implanted layer by applying an impact to the silicon ingot in which the ion-implanted layer is formed to obtain a silicon substrate having a thickness of 50 μm or less.