Zr-substituted BaTiO3 films

A method comprising:

• forming an integrated circuit having at least one device including a dielectric containing barium titanate and zirconium oxide, wherein forming the dielectric comprises:
• forming a plurality of barium titanate monolayers on a substrate;
• forming a plurality of barium zirconate monolayers on the substrate;
• and
• repeating the forming of the pluralities of barium titanate and barium zirconate monolayers on the substrate until a final thickness is obtained;
• annealing the dielectric to form a substantially single region of zirconium substituted barium titanate;
• and
• forming a patterned conductive material coupled to the dielectric.

A method comprising:

• forming a memory array on a substrate including:
• forming a ferroelectric containing zirconium substituted barium titanate in an integrated circuit by a monolayer or partial monolayer sequencing process that comprises:
• forming a plurality of barium titanate monolayers on the substrate;
• forming a plurality of barium zirconate monolayers on the substrate;
• and
• repeating the forming of the pluralities of barium titanate and barium zirconate monolayers on the substrate until a final thickness is obtained;
• annealing the ferroelectric at least once in one of a non-oxidizing ambient or an oxidizing ambient;
• and
• depositing a conductive material contacting the ferroelectric;
• and
• forming an address decoder in the substrate, the address decoder coupled to the memory array.

A method comprising:

• providing a controller;
• coupling an integrated circuit to the controller, wherein the integrated circuit includes a ferroelectric contacting a conductive material, wherein forming the ferroelectric contacting the conductive material includes:
• forming the ferroelectric by a monolayer or partial monolayer sequencing process including:
• forming a plurality of barium titanate monolayers on a substrate;
• forming a plurality of barium zirconate monolayers on the substrate;
• and
• repeating the forming of the pluralities of barium titanate and barium zirconate monolayers on the substrate until a final thickness is obtained;
• annealing the ferroelectric at least once in one of a non-oxidizing ambient or an oxidizing ambient;
• and
• depositing the conductive material such that the conductive material contacts the ferroelectric.