Acid-etch resistant, protective coatings

A method of forming a microelectronic structure, said method comprising:

• providing a substrate having a surface;
• optionally forming a primer layer on said substrate surface;
• forming a protective layer on said primer layer, if present, or on said substrate surface if no primer layer is present, to yield a protected stack, said protective layer being formed from a composition comprising a cycloolefin copolymer of recurring cycloolefin monomers and monomers of
• where:
• - - - - - is a single bond;
• and
• each R4 is individually selected from the group consisting of —H and alkyl groups;
• said cycloolefin copolymer being dissolved or dispersed in a solvent system, wherein said protective layer would experience very little or no acid etchant penetration if etched by an approximately 48% by weight aqueous HF solution, having a temperature of about 20-25° C., for about 1-2 hours;
• and
• subjecting said protected stack to an acidic etching process.