Method and system for forming a pattern using charged particle beam lithography with multiple exposure passes which expose different surface area
AssigneeD2S, Inc.
InventorsHarold Robert Zable, Akira Fujimura
Life of this patent
Estimating the term…
Loading patent…
AssigneeD2S, Inc.
InventorsHarold Robert Zable, Akira Fujimura
Estimating the term…
In the field of semiconductor production using charged particle beam lithography, a method and system for fracturing or mask data preparation or proximity effect correction is disclosed, in which the union of shots from one of a plurality of exposure passes is different than the union of shots from a different exposure pass. Methods for manufacturing a reticle and manufacturing an integrated circuit are also disclosed, in which the union of shots from one of a plurality of charged particle beam exposure passes is different than the union of shots from a different exposure pass.
A method for fracturing or mask data preparation or proximity effect correction for charged particle beam lithography comprising:
A method for forming a set of patterns on a surface using a shaped beam charged particle beam system, the method comprising:
A method for manufacturing an integrated circuit using an optical lithographic process, the optical lithographic process using a reticle, the method comprising:
A method for fracturing or mask data preparation or proximity effect correction for shaped beam charged particle beam lithography comprising:
A method for forming a set of patterns on a surface using a shaped beam charged particle beam system, the method comprising:
A system for fracturing or mask data preparation or proximity effect correction for use with shaped beam charged particle beam lithography comprising:
Dependencies are inferred from the claim text.