Exposure mask and method for manufacturing same and method for manufacturing semiconductor device

A method for manufacturing a semiconductor device, comprising:

• forming a resist film on a semiconductor substrate;
• exposing the resist film using an exposure mask;
• developing the resist film to form a resist pattern;
• and
• using the resist pattern as a mask to selectively process the semiconductor substrate,
• the exposure mask including:
• an insulative substrate having a main surface, the main surface including:
• a center region;
• an intermediate region surrounding the center region;
• and
• an outer region surrounding the intermediate region;
• a light reflecting film provided on the center region and the outer region;
• a light absorbing film provided on the light reflecting film and forming a pattern in the center region;
• and
• an interconnect provided across the intermediate region and electrically connecting a portion of a laminated film, composed of the light reflecting film and the light absorbing film, located in the center region and a portion of the laminated film located in the outer region, a width of the interconnect being smaller than a minimum width of the pattern,
• wherein the light reflecting film and the light absorbing film are not provided in the intermediate region.