Process for the manufacture of doped semiconductor single crystals, and III-V semiconductor single crystal

A III-V semiconductor single crystal ingot having a diameter of at least about 100 mm, wherein the ingot is produced by a process of vertically directed solidification of a melt of semiconductor material, wherein the semiconductor melt is covered by a cover melt, and wherein the ingot satisfies the following conditions within its cylindrical part at each axial position corresponding to mass fractions g of solidified melt between 0.1 and 0.9:

• a concentration of an electrical conductivity-generating dopant in a range of about 1×1018 atoms/cm3 to 5×1019 atoms/cm3;
• a concentration of an impurity that is present due to the manufacturing process for the single crystal from the cover melt is contained at a concentration in a range of about 1×1017 atoms/cm3 to 5×1018 atoms/cm3;
• and
• a charge carrier concentration of at least about 1.0×1018 cm−3, wherein the Hall mobility, determined according to ASTM F76-86, for the case of a charge carrier concentration of 1.0 to 1.2×1018 cm−3 is higher than 2,100 cm2/Vs, and for the case of a charge carrier concentration of higher than 1.2×1018 cm−3 is higher than 1,900 cm2/Vs.