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AssigneeJX Nippon Mining & Metals Corporation
InventorsHideo Takami, Masakatsu Ikisawa
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An indium oxide sintered compact containing zirconium as an additive, wherein the ratio of atomic concentration of zirconium to the sum of the atomic concentration of indium and the atomic concentration of zirconium is in the range of 0.5 to 4%, the relative density is 99.3% or higher, and the bulk resistance is 0.5 mΩ·cm or less. This invention aims to provide an indium oxide transparent conductive film of high transmittance in the visible light region and the infrared region, with low film resistivity, and in which the crystallization temperature can be controlled, as well as the manufacturing method thereof, and an oxide sintered compact for use in producing such transparent conductive film.
An indium oxide sintered compact containing zirconium and tin as additives, wherein a ratio of atomic concentration of zirconium to a sum of that of indium and zirconium is in a range of 0.5 to 4%, a ratio of atomic concentration of tin to a sum of that of indium, zirconium and tin is in a range of 0.015 to 0.5%, relative density is 99.3% or higher, and bulk resistance is 0.5 mO·cm or less.
Dependencies are inferred from the claim text.