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AssigneeTokyo Electron Limited
InventorsToshihisa Ozu, Naoki Matsumoto, Takashi Tsukamoto, Kazuto Takai
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Uniformity of a plasma process on a surface of a substrate is to be improved. In a plasma processing apparatus that processes a substrate by generating plasma from a processing gas introduced in a processing container, a ratio between an introducing amount of the processing gas introduced to a center portion of the substrate received in the processing container and an introducing amount of the processing gas introduced to a peripheral portion of the substrate received in the processing container is changed during a plasma process. Accordingly, a variation in an etching rate or the like between the center portion and the peripheral portion of the substrate may be reduced. Therefore, uniformity of the plasma process on the surface of the substrate is improved.
A plasma processing method which processes a substrate by generating plasma from a processing gas introduced into a processing container, the plasma processing method comprising changing a ratio between an introducing amount of the processing gas introduced onto a center portion of the substrate received in the processing container and an introducing amount of the processing gas introduced onto a peripheral portion of the substrate received in the processing container, during a plasma process,
A plasma etching method for etching a substrate by introducing a processing gas, in which a plurality of material gases are mixed, into a processing container and generating plasma from the processing gas in the processing container, the plasma etching method comprising changing a mixture ratio of the material gases that are different from each other to control a critical dimension (CD),
Dependencies are inferred from the claim text.