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US 8,771,495 B2Granted
Method and composition for electrodeposition of copper in microelectronics with dipyridyl-based levelers
AssigneeEnthone Inc.
InventorsVincent Paneccasio, Jr., Xuan Lin, Richard Hurtubise, Qingyun Chen
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Abstract
A method and composition for metallizing a via feature in a semiconductor integrated circuit device substrate, using a leveler compound which is a dipyridyl compound.
Claims19
An electrolytic deposition composition comprising:
- (a) a source of copper ions, and
- (b) a leveler compound, wherein the leveler compound comprises a polymer comprising repeating units that comprise quaternized dipyridyl moieties.
An electrolytic deposition composition comprising:
- (a) a source of copper ions;
- and
- (b) a reaction product of a dipyridyl compound and an alkylating agent and the alkylating agent comprises the following structure (IIIb):
- Y—(CH2)p—B—(CH2)q—Z Structure (IIIb)
- wherein
- B is selected from among:
- and
- p and q may be the same or different, are integers between 0 and 6, wherein at least one of p and q is at least 1;
- X is an integer from one to about four;
- Y and Z are leaving groups selected from among chloride, bromide, iodide, tosyl, triflate, sulfonate, mesylate, methosulfate, fluorosulfonate, methyl tosylate, brosylate, or nosylate;
- and
- R1 through R14 are each independently hydrogen, substituted or unsubstituted alkyl having from one to six carbon atoms, substituted or unsubstituted alkylene having from one to six carbon atoms, or substituted or unsubstituted aryl.
9 more elements
A composition for metalizing a via feature in a semiconductor integrated circuit device substrate comprising:
- (a) a source of copper ions;
- (b) a leveler compound comprising the reaction product of a dipyridyl compound and an alkylating agent, wherein the dipyridyl compound comprises structure (IIf):
- (c) an accelerator;
- and
- (d) a suppressor.
2 more elements
A composition for metalizing a via feature in a semiconductor integrated circuit device, the composition comprising:
- (a) a source of copper ions;
- (b) a leveler compound comprising the following structure (XIX):
- wherein o is one or two;
- and
- A is selected from among:
- Y is selected from among chloride, bromide, iodide, tosyl, triflate, sulfonate, mesylate, dimethyl sulfonate, fluorosulfonate, methyl tosylate, brosylate, or nosylate;
- and m is an integer having a value between one and six;
- (c) an accelerator;
- and
- (d) a suppressor.
7 more elements
Dependencies are inferred from the claim text.