Substrate processing apparatus with an insulator disposed in the reaction chamber

A substrate processing apparatus comprising:

• a reaction chamber configured to process a substrate;
• a heating target object disposed in the reaction chamber to surround at least a region where the substrate is disposed, the heating target object having a cylindrical shape with a closed end;
• an insulator disposed between the reaction chamber and the heating target object to surround the heating target object,
• wherein the insulator is made of a material different from that of the heating target object and has a cylindrical shape with a closed end at a same side as that of the heating target object, and
• wherein the insulator comprises:
• a plurality of first members arranged along a circumferential direction of the insulator with first gaps therebetween;
• and
• a plurality of second members arranged along the circumferential direction with second gaps therebetween so as to surround the plurality of first members, the second gaps being circumferentially shifted with respect to the first gaps;
• an induction heating unit disposed outside the reaction chamber to surround at least the region where the substrate is disposed;
• a first gas supply system configured to supply at least a source gas into the reaction chamber;
• and
• a controller configured to control the first gas supply system so that the first gas supply system supplies at least the source gas into the reaction chamber for processing the substrate.