Method of manufacturing silicon single crystal, silicon single crystal ingot, and silicon wafer

A method of manufacturing a silicon single crystal, comprising:

• growing a first silicon single crystal ingot including neither a COP nor a dislocation cluster by a Czochralski method;
• slicing an evaluation sample from the first silicon single crystal ingot;
• performing a reactive ion etching on the evaluation sample in the as-grown state to expose a defect including silicon oxide as a protrusion, wherein a generation region of the exposed protrusion is a Pv region which includes an oxygen precipitation nucleus in an as-grown state;
• and
• adjusting a growing condition of a subsequently-grown silicon single crystal ingot on a basis of a radius of a generation region of the exposed protrusion exposed on the evaluation process,
• wherein the subsequently-grown silicon single crystal ingot is thereby pulled up under a condition where the protrusion is not formed on the surface of the evaluation sample.