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US 8,739,806 B2Granted
Chemical mechanical polishing system
AssigneeNanya Technology Corporation
InventorsLi-Chung Liu, Yi-Nan Chen, Hsien-Wen Liu
Life of this patent
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Abstract
A chemical mechanical polishing (CMP) system includes a wafer polishing unit comprising a waste liquid sink for receiving a used slurry and a waste slurry drain piping for draining the used slurry; and a post-CMP cleaning unit coupled to the wafer polishing unit such that a used base chemical such as tetramethyl ammonium hydroxide (TMAH) produced from the post-CMP cleaning unit flows toward the wafer polishing unit to frequently wash at least the waste slurry drain piping in a real time fashion on a wafer by wafer basis.
Claims7
A chemical mechanical polishing (CMP) system, comprising:
- a wafer polishing unit comprising a waste liquid sink for receiving a used slurry a waste slurry drain piping for draining the used slurry, a platen, a polishing pad mounted on the platen, a carrier for holding and rotating a wafer, and a slurry feeding device;
- and
- a post-CMP cleaning unit externally coupled to the wafer polishing unit, wherein the post-CMP cleaning unit comprises a waste liquid sink that is connected to the waste liquid sink of the wafer polishing unit through a conduit that guides a used base chemical from the post-CMP cleaning unit to flow toward the wafer polishing unit to wash at least the waste slurry drain piping every time the post-CMP cleaning unit is operated, and the post-CMP cleaning unit further comprises a plurality of rollers for supporting and rotating a wafer, a brush for scrubbing the wafer, and a spray bar disposed in proximity to the brush.
Dependencies are inferred from the claim text.