Layout design defect repair based on inverse lithography and traditional optical proximity correction

A method, comprising:

• with a computer,
• receiving information of an altered layout design and one or more errors detected in the altered layout design, the altered layout design generated by performing a resolution enhancement process on a layout design, the layout design representing at least a portion of an integrated circuit design;
• determining a re-correction region around at least one of the one or more detected errors, wherein the re-correction region designates a sub-portion of the altered layout design and includes three portions—core, context and visible, wherein the core portion is enclosed by the context portion and the context portion is enclosed by the visible portion;
• performing an inverse lithography process on the core portion of the re-correction region while taking into account effects from the context portion of the re-correction region to generate a first modified re-correction region;
• performing an optical proximity correction process on the core portion of and the context portion of the first modified re-correction region while taking into account effects from the visible portion of the first modified re-correction region to generate a second modified re-correction region;
• and
• saving information of the second modified re-correction region to a memory storage location.

A system comprising:

• one or more processors, the one or more processors programmed to perform a method, the method comprising:
• receiving information of an altered layout design and one or more errors detected in the altered layout design, the altered layout design generated by performing a resolution enhancement process on a layout design, the layout design representing at least a portion of an integrated circuit design;
• determining a re-correction region around at least one of the one or more detected errors, wherein the re-correction region designates a sub-portion of the altered layout design and includes three portions—core, context and visible, wherein the core portion is enclosed by the context portion and the context portion is enclosed by the visible portion;
• performing an inverse lithography process on the core portion of the re-correction region while taking into account effects from the context portion of the re-correction region to generate a first modified re-correction region;
• performing an optical proximity correction process on the core portion of and the context portion of the first modified re-correction region while taking into account effects from the visible portion of the first modified re-correction region to generate a second modified re-correction region;
• and
• saving information of the second modified re-correction region to a memory storage location.