Methods for selective reverse mask planarization and interconnect structures formed thereby

A planarization method comprising:

• forming a conductive layer on a substrate;
• forming a bottom antireflection coating (BARC) layer on a top surface of the conductive layer;
• patterning the conductive layer and the BARC layer on the top surface of the conductive layer to form a plurality of conductive features each covered by a portion of the BARC layer;
• after the conductive layer and the BARC layer are patterned, depositing a first dielectric layer on a top surface of the conductive features and on a top surface of the substrate between the conductive features;
• selectively etching a first portion of the first dielectric layer from the top surface of at least one of the conductive features and stopping on the portion of the BARC layer without etching a second portion of the first dielectric layer that is located between the conductive features;
• forming a second dielectric layer on the top surface of the at least one of the conductive features and on a top surface of the second portion of the first dielectric layer;
• and
• planarizing a top surface of the second dielectric layer.