Back to results
US 8,710,638 B2Granted
Socket type MEMS device with stand-off portion
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorTing-Hua Wu
Life of this patent
Estimating the term…
Abstract
A method for fabricating an integrated circuit device is disclosed. The method includes providing a first substrate; bonding a second substrate to the first substrate, the second substrate including a microelectromechanical system (MEMS) device; and bonding a third substrate to the first substrate.
Claims20
A device comprising:
- a first substrate;
- a second substrate distinct from the first substrate including a MEMS device bonded to the first substrate;
- at least one cavity extending through the second substrate;
- and
- a third substrate over and distinct from the second substrate, wherein a stand-off portion of the third substrate extends through the at least one cavity of the second substrate to bond a portion of the first substrate,
- wherein an open space separates a sidewall of the second substrate from the stand-off portion of the third substrate.
3 more elements
A device comprising:
- a substrate;
- one or more MEMS structures bonded to the substrate;
- a capping structure over the one or more MEMS structures, wherein the capping structure is bonded to the substrate and encloses the one or more MEMS structures between the capping structure and the substrate, and
- wherein the capping structure is bonded to the substrate by a stand-off portion of the capping structure extending through a cavity of the at least one of the one or more MEMS structures to contact the substrate, and
- wherein a space separates sidewalls of the cavity of the one or more MEMS structures from the stand-off portion of the capping structure.
2 more elements
A device comprising:
- a semiconductor substrate;
- a semiconductor intermediate structure including a MEMS device, wherein the semiconductor intermediate structure is distinct from and over the semiconductor substrate;
- a plurality of cavities extending through the semiconductor intermediate structure;
- a capping structure distinct from and over the semiconductor intermediate structure;
- and
- a stand-off structure that extends from the capping structure through one of the plurality of cavities to the semiconductor substrate.
3 more elements
Dependencies are inferred from the claim text.