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US 8,710,626 B2Granted
Semiconductor device having trapezoidal shaped trenches
AssigneeSeiko Instruments Inc.
InventorsAyako Inoue, Naoto Saitoh
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Abstract
Provided is a semiconductor capacitor including: a capacitor device forming region having a trapezoidal trench which is formed on a surface of a first conductivity type semiconductor substrate; a second conductivity type lower electrode layer provided along the trapezoidal trenches of the capacitor device forming region; a capacitor insulating film formed at least on a surface of the second conductivity type lower electrode layer; and a second conductivity type upper electrode formed on a surface of the capacitor insulating film.
Claims2
A semiconductor device comprising:
- a first conductivity type single-crystal semiconductor substrate;
- a capacitor device region in the first conductivity type single-crystal semiconductor substrate and having a surface including a recess bounded by a planar plateau, where the recess includes oxygen-reacted sidewalls aligned with crystal planes of the semiconductor substrate and rounded features, such that the recess defines a trapezoidal shaped trench in the semiconductor substrate;
- a second conductivity type lower electrode layer in the planar plateau and the oxygen-reacted sidewalls of the trapezoidal shaped trench;
- a capacitor insulating film on a surface of the second conductivity type lower electrode layer;
- and
- a second conductivity type upper electrode layer on a surface of the capacitor insulating film.
3 more elements
Dependencies are inferred from the claim text.