Magnetoresistive element and manufacturing method of the same
AssigneeKabushiki Kaisha Toshiba
InventorsKoji Yamakawa, Katsuaki Natori, Daisuke Ikeno, Tadashi Kai
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AssigneeKabushiki Kaisha Toshiba
InventorsKoji Yamakawa, Katsuaki Natori, Daisuke Ikeno, Tadashi Kai
Estimating the term…
In accordance with an embodiment, a magnetoresistive element includes a lower electrode, a first magnetic layer on the lower electrode, a first diffusion prevention layer on the first magnetic layer, a first interfacial magnetic layer on the first metal layer, a nonmagnetic layer on the first interfacial magnetic layer, a second interfacial magnetic layer on the nonmagnetic layer, a second diffusion prevention layer on the second interfacial magnetic layer, a second magnetic layer on the second diffusion prevention layer, and an upper electrode layer on the second magnetic layer. The ratio of a crystal-oriented part to the other part in the second interfacial magnetic layer is higher than the ratio of a crystal-oriented part to the other part in the first interfacial magnetic layer.
A magnetoresistive element comprising:
Dependencies are inferred from the claim text.