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US 8,709,954 B2Granted
Wafer recycling method
AssigneeLG Innotek Co., Ltd.
InventorsKyung Jun Kim, Hyo Kun Son
Life of this patent
Estimating the term…
Abstract
A wafer recycling method comprises varying a temperature and pressure conditions to remove a first semiconductor layer deposited on a wafer, removing a remaining semiconductor layer on the wafer through a chemical or physical process, and washing the wafer.
Claims7
A wafer recycling method, comprising:
- varying a temperature and pressure conditions to remove a first semiconductor layer including GaN deposited on a wafer by separating the first semiconductor layer into a liquid-phase material and a gas-phase material;
- removing a remaining semiconductor layer on the wafer through a chemical or physical process;
- and
- washing the wafer via a chemical washing process that uses a first chemical solution containing ammonium hydroxide (NH4OH) for removing an organic pollutant and a second chemical solution containing hydrochloric acid for removing an inorganic pollutant,
- wherein the GaN is separated into a liquid-phase Ga and a gas-phase N by setting the temperature within a range of about 2000 K-about 2490 K and the pressure using argon gas within about 1000 bar-about 60,000 bar by a metal organic chemical vapor deposition equipment.
2 more elements
A wafer recycling method, comprising:
- separating an atom binding of a semiconductor layer including GaN deposited on a wafer by varying a temperature and pressure conditions by separating the semiconductor layer into a liquid-phase material and a gas-phase material;
- and
- washing the wafer via a chemical washing process that uses a first chemical solution containing ammonium hydroxide (NH4OH) for removing an organic pollutant and a second chemical solution containing hydrochloric acid for removing an inorganic pollutant,
- wherein the GaN is separated into a liquid-phase Ga and a gas-phase N by setting the temperature within a range of about 2000 K-about 2490 K and the pressure using argon gas within about 1000 bar-about 60,000 bar by a metal organic chemical vapor deposition equipment.
1 more element
Dependencies are inferred from the claim text.