Methods of fabricating semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorsSang-Hyun Hong, Jung-Hyuk Lee, Su-Jin Ahn, Dae-Won Ha
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Abstract
A method of manufacturing a semiconductor device includes providing a wafer, forming a memory device which includes phase change material layer on the wafer, completing a wafer level process of manufacturing the semiconductor device, and performing a thermal treatment process on the wafer to densify the phase change material. To this end, the process temperature of the thermal treatment is higher than the crystallization temperature of the phase change material and lower than the melting point of the phase change material.
Claims17
A method of manufacturing a semiconductor device, the method comprising:
- forming a memory device comprising phase change material on a wafer;
- completing a wafer level process of manufacturing the semiconductor device;
- densifying the phase change material by subjecting the wafer to a thermal treatment;
- and
- a first burn-in test on the memory device between the wafer level process and the thermal treatment, wherein the first burn-in test comprises applying an electrical load to the memory device that is higher than the maximum load applied to the memory device during the course of its normal operation.
A method of manufacturing a semiconductor device, the method comprising:
- providing a wafer;
- forming a memory device comprising phase change material on a wafer;
- completing a wafer level process of manufacturing the semiconductor device;
- subsequently performing a burn-in test on the memory device;
- and
- subsequently densifying the phase change material by subjecting the wafer to a thermal treatment process conducted at a temperature higher than the crystallization temperature of the phase change material and lower than the melting point of the phase change material.
A method of manufacturing a semiconductor device, the method comprising:
- forming a memory array of cells on a wafer, wherein each cell includes a memory device comprising phase change material;
- completing a wafer level process of manufacturing the semiconductor device;
- densifying the phase change material after completing the wafer level process, wherein the densifying comprises subjecting the wafer to a thermal treatment;
- and
- a burn-in test on the memory array between the wafer level process and the thermal treatment, wherein the burn-in test comprises applying an electrical load to the memory array that is higher than the maximum load specified for the semiconductor device for its normal operation.
Dependencies are inferred from the claim text.