E-chuck with automated clamped force adjustment and calibration

A system comprising:

• a measuring device operable to measure a wafer for wafer data after a first semiconductor process;
• an E-chuck in a processing chamber, wherein the E-chuck includes:
• a base component;
• a chuck disposed over the base component and having an electrode and a dielectric feature formed on the electrode, wherein the electrode is structurally configured to apply an electrostatic force through the dielectric feature to secure the wafer to the chuck and the dielectric feature is structurally configured to directly contact the wafer to maintain the electrostatic force, the chuck being different than the base component;
• a sensor embedded in the base component and collecting sensor data;
• an adjustable clamp extending from the base component to the chuck, the adjustable clamp applying a mechanical clamping force to the chuck during a second semiconductor process, the mechanical clamping force being different than the electrostatic force;
• and
• a process control module in communication with the measuring device and the sensor, the process control module operable to adjust the mechanical clamping force applied to the chuck based on the wafer data received from the measuring device and the sensor data from the sensor.

A semiconductor processing system comprising:

• a first processing tool operable to pattern a wafer;
• a first metrology tool integrated with the first processing tool and operable to measure a dimension of the pattern on the wafer;
• a second processing tool operable to etch a material layer on the wafer, the second processing tool including a wafer-holding mechanism that includes:
• a base component;
• a chuck disposed over the base component and having an electrode and a dielectric feature formed on the electrode, wherein the electrode is structurally configured to apply an electrostatic force through the dielectric feature to secure the wafer to the chuck and the dielectric feature is structurally configured to directly contact the wafer to maintain the electrostatic force, the chuck being different than the base component;
• and
• an adjustable holding force clamp extending from the base component to the chuck, the adjustable holding force clamp applying a mechanical clamping force to the chuck, the mechanical clamping force being different than the electrostatic force;
• and
• a second metrology tool operable to measure the wafer for wafer data after the etch;
• and
• a process control module in communication with the first metrology tool, the process control module operable to adjust the mechanical clamping force based on the measured dimension of the pattern received from the first metrology tool.