Method of fabricating a lithography mask
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHsin-Chang Lee, Yun-Yue Lin, Pei-Cheng Hsu, Chia-Jen Chen, Ta-Cheng Lien, Anthony Yen
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Abstract
A method of fabricating an extreme ultraviolet (EUV) mask is disclosed. The method includes providing a substrate, forming a reflective multilayer (ML) over the substrate, forming a buffer layer over the reflective ML, forming an absorption layer over the buffer layer and forming a capping layer over the absorption layer. The capping layer and the absorption layer are etched to form the EUV mask.
Claims20
A method of fabricating an extreme ultraviolet (EUV) mask, the method comprising:
- providing a substrate;
- forming a reflective multilayer (ML) over a surface of the substrate;
- forming a conductive layer on an opposite surface of the substrate;
- forming a buffer layer over the reflective ML;
- forming an absorption layer over the buffer layer;
- forming a capping layer over the absorption layer;
- and
- etching the capping layer and the absorption layer.
A method of fabricating an extreme ultraviolet (EUV) mask, the method comprising:
- providing a low thermal expansion material (LTEM) substrate;
- forming a reflective multilayer (ML) over the LTEM substrate;
- forming a buffer layer over the reflective ML;
- forming an absorption layer over the buffer layer;
- forming a capping layer over the absorption layer;
- and
- performing a continuous plasma dry etching to etch the capping layer and the absorption layer.
A method of fabricating an extreme ultraviolet (EUV) mask, the method comprising:
- forming a conductive layer at a first surface of a substrate, wherein the conductive layer includes one or more from the group consisting of chromium nitride (CrN), tantalum nitride (TaN), tantalum boron nitride (TaBN), and tantalum oxynitride (TaON);
- forming a reflective multilayer (ML) at a second, opposite surface of the substrate;
- forming a Ru buffer layer on the reflective ML;
- forming an absorption layer on the Ru buffer layer, wherein the absorption layer includes materials from the group consisting of tantalum nitride, tantalum oxynitride, and tantalum boron nitride;
- forming a capping layer on the absorption layer, wherein the capping layer includes materials from the group consisting of chromium, chromium nitride, chromium oxynitride, and chromium oxide;
- and
- performing a multi-step etching to etch the capping layer and the absorption layer.
Dependencies are inferred from the claim text.