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US 8,647,031 B2Granted
Method of making a semiconductor device having a multicomponent oxide
AssigneeHewlett-Packard Development Company, L.P.
InventorsRandy L. Hoffman, Gregory S. Herman, Peter P. Mardilovich
Life of this patent
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Abstract
A semiconductor device includes a metal oxide channel and methods for forming the same. The metal oxide channel includes indium, gallium, and zinc.
Claims20
A method of forming a channel, comprising:
- providing at least one precursor composition that includes a plurality of precursor compounds, wherein the precursor compounds comprise indium, gallium, and zinc oxides;
- and
- depositing the channel including the precursor composition to form a multicomponent from the precursor composition to electrically couple a drain electrode and a source electrode.
A method of forming a channel, comprising:
- providing at least one precursor composition that includes indium, gallium, and zinc oxides;
- and
- depositing the channel including the precursor composition to form an indium-gallium-zinc metal oxide from the precursor composition to electrically couple a drain electrode and a source electrode.
A method of forming a channel, comprising:
- forming a drain electrode;
- forming a source electrode;
- and
- forming a channel, configured to electrically couple the drain electrode and the source electrode, wherein the channel includes a metal oxide having one or more compounds of formula AxBxCxOx, from a precursor composition that includes one or more precursor compounds that include Ax, one or more precursor compounds that include Bx, and one or more precursor compounds that include Cx wherein A is In, B is Ga, C is Zn, O is atomic oxygen, and wherein each x is independently a non-zero integer.
1 more element
Dependencies are inferred from the claim text.