Automatic layout conversion for FinFET device

A method, comprising:

• receiving an initial layout plan of a semiconductor device, the initial layout plan containing an active region that has an edge extending in a first direction;
• designating a portion of the initial layout plan as a first region, the active region being disposed within the first region;
• designating, by using a computer, an elongate portion of the first region as a second region, the second region including a plurality of second regions extending in the first direction and spaced apart from one another in a second direction by respective distances, the second direction being substantially perpendicular to the first direction;
• designating a different elongate portion of the first region as a third region, the third region extending in the first direction, the third region being adjacent to one of the second regions in a second direction;
• enlarging the active region by moving the edge of the active region in the second direction if the edge of the active region is located inside the third region;
• and
• shrinking the active region if the edge of the active region is located outside the third region;
• wherein the designating the portion of the initial layout plan as the first region is carried out in a manner so that an edge of the first region is spaced apart in the second direction from the active region by a value that is equal to approximately:
• 2×(a width of one of the second regions+one of the distances spacing apart the second regions)−½×(the width of one of the second regions)−(a width of the third region).

An apparatus comprising a non-transitory, tangible computer readable storage medium storing a computer program for modifying a layout of a semiconductor device, wherein the computer program has instructions that when executed, carry out:

• assigning a portion of the layout as a FinFET region, the FinFET region having an active region that includes a border extending substantially in a first direction;
• assigning a first portion of the FinFET region as a mandrel region, the mandrel region having a first elongate side that extends substantially in the first direction;
• assigning a second portion of the FinFET region as a fin region, the fin region having a second elongate side that extends substantially in the first direction and being abutted to the first elongate side;
• determining whether the border of the active region is located within the fin region;
• and
• varying a geometry of the active region in response to the determining,
• wherein the mandrel region is a first mandrel region, and the fin region is a first fin region, and wherein the computer program further includes instructions that when executed, carry out:
• assigning a third portion of the FinFET region as a second mandrel region, the second mandrel region having a third elongate side that extends substantially in the first direction and being disposed away from the first mandrel region in the second direction;
• and
• assigning a fourth portion of the FinFET region as a second fin region, the second fin region having a fourth elongate side that extends substantially in the first direction and being abutted to the third elongate side;
• wherein the first and second mandrel regions each have a first width, and the first and second fin regions each have a second width, the first and second widths being measured in the second direction, and wherein the first width is greater than the second width.