FinFET structures and methods for fabricating the same
AssigneeGlobalfoundries Inc.
InventorDaniel Thanh Khac Pham
Life of this patent
Estimating the term…
Abstract
A method for fabricating a FinFET structure includes fabricating a plurality of parallel fins overlying a semiconductor substrate, each of the plurality of parallel fins having sidewalls and forming an electrode over the semiconductor substrate and between the parallel fins. The electrode is configured to direct an electrical field into the fins, thereby affecting the threshold voltage of the FinFET structure.
Claims20
A method for fabricating a FinFET structure, the method comprising the steps of:
- fabricating a plurality of parallel fins overlying a semiconductor substrate, each of the plurality of parallel fins having sidewalls;
- and
- forming a bottom or substrate electrode over the semiconductor substrate and located at a bottom area and between the parallel fins, and isolated with the FinFET structure,
- wherein the bottom or substrate electrode is configured to direct an electrical field into the fins, thereby affecting the threshold voltage of the FinFET structure.
A method for fabricating an semiconductor device, the method comprising the steps of:
- providing a semiconductor substrate;
- fabricating a plurality of parallel fins overlying the semiconductor substrate, each of the plurality of parallel fins having sidewalls;
- and
- forming a bottom or substrate electrode over the semiconductor substrate and located at a bottom area and between the parallel fins, and isolated with the FinFET structure,
- wherein the electrode is configured to direct an electrical field into the fins, thereby affecting the threshold voltage of the FinFET structure.
A FinFET structure on a semiconductor device comprising:
- a plurality of parallel fins overlying a semiconductor substrate, each of the plurality of parallel fins having sidewalls;
- and
- an electrode formed over the semiconductor substrate and located at a bottom area and between the parallel fins, and isolated with the FinFET structure,
- wherein the electrode is configured to direct an electrical field into the fins, thereby affecting the threshold voltage of the FinFET structure.
Dependencies are inferred from the claim text.