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US 8,618,602 B2Granted
Semiconductor device and method of forming the same
AssigneeElpida Memory, Inc.
InventorKiyonori Oyu
Life of this patent
Estimating the term…
Abstract
A semiconductor device may include, but is not limited to, a semiconductor substrate, a word line, and an isolation region. The semiconductor substrate has an active region and first and second grooves. Each of the first and second grooves extends across the active region. The first groove is wider in width than the second groove. The word line is disposed in the first groove. The isolation region is disposed in the second groove. The isolation region is narrower in width than the word line.
Claims18
A semiconductor device comprising:
- a semiconductor substrate having an active region and first and second grooves, each of the first and second grooves extending across the active region, the first groove being wider in width than the second groove;
- a word line in the first groove, the word line comprising:
- a first gate insulating film covering inside walls of the first groove;
- and
- a first conductive film in the first groove, the first conductive film being separated by the first gate insulating film from the semiconductor substrate;
- an isolation region in the second groove, the isolation region being narrower in width than the word line and comprising:
- a second gate insulating film covering inside walls of the second groove;
- and
- a second conductive film in the second groove, the second conductive film being separated by the second gate insulating film from the semiconductor substrate;
- and
- a diffusion region in the active region, the diffusion region being between the first and second grooves,
- wherein the second conductive film is substantially the same in its top surface level as the first conductive film, and
- wherein the top surface levels of the first and second conductive film are shallower than a bottom surface level of the diffusion region.
10 more elements
A semiconductor device comprising:
- an active region provided in a semiconductor substrate and extended in a first direction;
- a first isolation region provided along the active region and extended in the first direction, the first isolation region having a trench filled with an insulator;
- a word line region having a first groove extending in a second direction which intersects the first direction;
- a second isolation region having a second groove extending in the second direction, the second groove being narrower in a width and deeper in a depth from a surface of the semiconductor substrate than the first groove;
- first and second conductive films buried in lower portions of the first and second grooves respectively, each of first and second conductive films extending continuously from the active region to the first isolation region;
- and
- a diffusion region extended downwardly from a surface of the semiconductor substrate and placed between the first and second grooves in the active region, top surfaces of each of the first and second conductive films being located above a bottom surface of the diffusion region and below the surface of the semiconductor substrate.
4 more elements
A semiconductor device comprising:
- an active region provided in a semiconductor substrate and extended in a first direction;
- a first isolation region provided along the active region and extended in the first direction,
- the first isolation region having a trench filled with an insulator;
- a word line region having a first groove extending in a second direction which intersects the first direction;
- a second isolation region having a second groove extending in the second direction, the second groove being narrower in a width and deeper in a depth from a surface of the semiconductor substrate than the first groove;
- a conductive film buried in a lower portion of each of the first and second grooves, the conductive film extending continuously from the active region to the first isolation region;
- a gate insulating film covering an inside wall of each of the first and second grooves and isolating the conductive film from the semiconductor substrate;
- and
- a diffusion region extended downwardly from a surface of the semiconductor substrate and placed between the first and second grooves in the active region, a top surface of conductive film being located above a bottom surface of the diffusion, region and below the surface of the semiconductor substrate.
6 more elements
Dependencies are inferred from the claim text.