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US 8,618,553 B2Granted
Process for producing silicon carbide crystals having increased minority carrier lifetimes
AssigneeCree, Inc.
InventorsCalvin H. Carter, Jr., Jason R. Jenny, David P. Malta, Hudson M. Hobgood, Valeri F. Tsvetkov, Mrinal K. Das
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Abstract
A process is described for producing silicon carbide crystals having increased minority carrier lifetimes. The process includes the steps of heating and slowly cooling a silicon carbide crystal having a first concentration of minority carrier recombination centers such that the resultant concentration of minority carrier recombination centers is lower than the first concentration.
Claims12
A silicon carbide single crystal wafer having a minority carrier lifetime of at least 20 microseconds.
A semiconductor device comprising:
- a silicon carbide single crystal substrate having a minority carrier lifetime of at least 20 microseconds;
- and
- at least one epitaxial layer.
A diode comprising:
- a p type layer;
- an n type layer;
- and
- a silicon carbide intrinsic layer sandwiched in between the p type layer and the n type layer wherein the minority carrier lifetime of the intrinsic layer is at least 20 microseconds.
1 more element
Dependencies are inferred from the claim text.