Back to results
US 8,618,002 B2Granted
Resist pattern formating method
AssigneeAZ Electronic Materials USA Corp.
InventorsWenbing Kang, Xiaowei Wang, Yuriko Matsuura
Life of this patent
Estimating the term…
Abstract
The present invention provides a pattern formation method capable of preventing formation of surface defects. In the method, a resist surface after subjected to exposure is coated with an acidic film and then subjected to heating treatment. This method is suitably adopted in a process employing liquid immersion lithography and/or light of short wavelength, such as ArF excimer laser beams, for producing a very fine pattern.
Claims14
A pattern formation method, comprising the steps of:
- applying a resist composition onto a substrate, to form a resist film;
- subjecting said resist film to exposure;
- coating said resist film with an acidic film-forming composition containing a polymer and a solvent that does not dissolve said resist film, so that said resist film after exposure is covered with an acidic film;
- heating said resist film;
- and then
- developing said resist film with a developing solution;
- wherein the polymer is selected from a group consisting of polymethacryllic acid, polymaleic acid and polystyrenesulfonic acid, and wherein the exposure for pattern formation is carried out by the use of electron beams or extreme ultraviolet light.
4 more elements
Dependencies are inferred from the claim text.