Semiconductor substrates using bandgap material between III-V channel material and insulator layer

Abstract

Improved semiconductor substrates are provided that employ a wide bandgap material between the channel and the insulator. A semiconductor substrate comprises a channel layer comprised of a III-V material; an insulator layer; and a wide bandgap material between the channel layer and the insulator layer, wherein a conduction band offset (ΔEc) between the channel layer and the wide bandgap material is between 0.05 eV and 0.8 eV. The channel layer can be comprised of, for example, In1−xGaxAs or In1−xGaxSb, with x varying from 0 to 1. The wide bandgap material can be comprised of, for example, In1−yAlyAs, In1−yAlyP, Al1−yGayAs or In1−yGayP, with y varying from 0 to 1.

Dependencies are inferred from the claim text.