Method of forming a capacitor and method of manufacturing a semiconductor device using the same
AssigneeSamsung Electronics Co., Ltd.
InventorsBong Jin Kuh, Jong Cheol Lee, Yong Suk Tak, Young Sub You, Kyu Ho Cho, Jong Sung Lim
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Abstract
A capacitor is fabricated by forming a mold layer of a silicon based material that is not an oxide of silicon, e.g., polysilicon or doped polysilicon, on a substrate, forming an opening through the mold layer, forming a barrier layer pattern along the sides of the opening, subsequently forming a lower electrode in the opening, then removing the mold layer and the barrier layer pattern, and finally sequentially forming dielectric layer and an upper electrode on the lower electrode.
Claims20
A method of manufacturing a capacitor, comprising:
- forming a mold layer, comprising silicon but excluding oxides of silicon, on a substrate;
- forming an opening extending through the mold layer, wherein the opening has a bottom and sides;
- forming a barrier layer along the sides of the opening;
- forming a lower electrode in the opening including over the barrier layer, wherein the barrier layer prevents a reaction from occurring between the lower electrode and the mold layer;
- removing the mold layer and the barrier layer;
- and
- sequentially forming a dielectric layer and an upper electrode on the lower electrode.
A method of manufacturing a semiconductor device, comprising:
- forming a transistor at an upper portion of a substrate, the transistor having a gate structure and an impurity region;
- forming an insulating interlayer on the substrate and which covers the transistor;
- forming a contact plug extending through the insulating interlayer;
- forming at least one mold layer, comprising silicon but excluding oxides of silicon, on the insulating interlayer and the contact plug;
- forming an opening through the at least one mold layer that exposes top surfaces of the contact plug and the insulating interlayer, wherein the opening has a bottom and sides;
- forming a barrier layer on the sides of the opening;
- forming a lower electrode in the opening including over the exposed top surfaces of the contact plug and the insulating interlayer, and the barrier layer, wherein the barrier layer prevents a reaction from occurring between the lower electrode and the mold layer;
- removing the mold layer and the barrier layer;
- and
- sequentially forming a dielectric layer and an upper electrode on the lower electrode.
A method of manufacturing a capacitor, comprising:
- forming a mold layer comprising doped or undoped polysilicon on an upper surface of a substrate;
- etching the mold layer to form an opening, extending through the mold layer, and which has a bottom and sides that are substantially perpendicular to the upper surface of the substrate;
- forming a barrier layer along the sides of the opening, wherein the barrier layer is of at least one material selected from the group consisting of silicon oxide, titanium oxide, aluminum oxide, tantalum oxide, silicon nitride, silicon oxynitride, silicon carbonitride, germanium oxide, germanium nitride, germanium oxynitride and germanium carbonitride;
- forming a lower electrode of a metal or metal nitride in the opening including over the barrier layer;
- removing the mold layer and the barrier layer;
- and
- sequentially forming a dielectric layer and an upper electrode on the lower electrode.
Dependencies are inferred from the claim text.