Chromeless phase-shifting photomask with undercut rim-shifting element
AssigneeInternational Business Machines Corporation
InventorsBrent A. Anderson, Jed H. Rankin
Life of this patent
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Abstract
A phase-shifting photomask with a self aligned undercut rim-shifting element and methods for its manufacture are provided. One embodiment of the invention provides a method of manufacturing a phase-shifting photomask having a self aligned rim-shifting element, the method comprising: applying a patterning film to a first portion of a transparent substrate; etching the substrate to a depth to remove a second portion of the substrate not beneath the patterning film; etching the first portion of the substrate to undercut an area beneath the patterning film; and removing the patterning film, wherein the etched substrate forms a self-aligned undercut rim-shifting element.
Claims8
A method of manufacturing a phase-shifting photomask having a self-aligned rim-shifting element, the method comprising:
- applying a first patterning film and a second patterning film to a first portion of a transparent substrate;
- etching the transparent substrate to a depth to remove a second portion of the transparent substrate not beneath the first and second patterning films to thereby define a third portion of the transparent substrate above the depth to which the transparent substrate is selectively etched, and a fourth portion of the transparent substrate above the depth to which the transparent substrate is selectively etched;
- applying a conformal film to the transparent substrate;
- using anisotropic etching to form a first sidewall spacer on the third portion of the transparent substrate, and a second sidewall spacer on the fourth portion of the transparent substrate;
- applying an additional photoresist layer atop the second patterning film, the second sidewall spacer, and an area of the transparent substrate adjacent the second sidewall spacer;
- etching the third portion of the transparent substrate and the first portion of the transparent substrate, beneath the first sidewall spacer to undercut an area beneath the first patterning film;
- etching the first portion of the transparent substrate beneath the additional photoresist layer, to undercut the area of the transparent substrate adjacent the second sidewall spacer;
- removing the additional photoresist layer to thereby yield a positive sidewall portion of the transparent substrate, above the first portion of the transparent substrate;
- and
- removing the first and second patterning films;
- wherein the etched transparent substrate forms a self-aligned undercut rim-shifting element.
Dependencies are inferred from the claim text.